Crossbar arrays based on "Wall" Phase-Change Memory (PCM) and Ovonic-Threshold Switching (OTS) selector: a device integration challenge towards new computing paradigms in embedded applications
Résumé
In this work, we demonstrate the integration feasibility of Crossbar arrays based on Ovonic-Threshold Switching (OTS) selector and "Wall"-based Phase-Change Memory, realized with a "Double-Patterned Self-Aligned" (DPSA) structure in the Back-End-of-Line (BEOL) of the CMOS fabrication. We fabricated devices with critical dimensions down to 60 nm×80 nm, integrating materials providing improved thermal stability (against BEOL thermal budget). Preliminary statistical electrical tests performed in 1 kb 1T1S1R arrays confirm the devices correct programming and cycling operations. These results pave the way to the integration of Crossbar arrays in embedded applications.
Domaines
MatériauxOrigine | Fichiers produits par l'(les) auteur(s) |
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