Crossbar arrays based on "Wall" Phase-Change Memory (PCM) and Ovonic-Threshold Switching (OTS) selector: a device integration challenge towards new computing paradigms in embedded applications
G. Bourgeois
,
V. Meli
,
R. Antonelli
,
C. Socquet-Clerc
,
T. Magis
,
et al.
Conference papers
cea-04098047v1
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Hydrogen silsesquioxane tri-dimensional advanced patterning concepts for high density of integration in sub-7 nm nodes
L. Gaben
,
V. Balan
,
C. Euvrard
,
S. Pauliac
,
J.-A. Dallery
,
et al.
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , Apr 2017, Athens, Greece. pp.120-123,
⟨10.1109/ULIS.2017.7962617⟩
Conference papers
hal-02014232v1
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HSQ Lithography for Nanowire First Integration: an Interesting Alternative for Gate Last Fabrication of Sub-7nm Stacked Nanowire FETs.
L. Gaben
,
S. Pauliac
,
J.-A. Dallery
,
J. Bustos
,
R. Dechanoz
,
et al.
2016 International Conference on Solid State Devices and Materials , Sep 2016, Tsukuba, Japan. pp.O-3-03 FinFET and Nanowire FET
Conference papers
hal-02015707v1
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