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authFullName_s : J.-A. Dallery
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Crossbar arrays based on "Wall" Phase-Change Memory (PCM) and Ovonic-Threshold Switching (OTS) selector: a device integration challenge towards new computing paradigms in embedded applications

G. Bourgeois , V. Meli , R. Antonelli , C. Socquet-Clerc , T. Magis , et al.
IEEE EDTM 2023 - 7th IEEE Electron Devices Technology and Manufacturing, IEEE, Mar 2023, SEOUL, South Korea. ⟨10.1109/EDTM55494.2023.10102961⟩
Conference papers cea-04098047v1

Hydrogen silsesquioxane tri-dimensional advanced patterning concepts for high density of integration in sub-7 nm nodes

L. Gaben , V. Balan , C. Euvrard , S. Pauliac , J.-A. Dallery , et al.
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.120-123, ⟨10.1109/ULIS.2017.7962617⟩
Conference papers hal-02014232v1

HSQ Lithography for Nanowire First Integration: an Interesting Alternative for Gate Last Fabrication of Sub-7nm Stacked Nanowire FETs.

L. Gaben , S. Pauliac , J.-A. Dallery , J. Bustos , R. Dechanoz , et al.
2016 International Conference on Solid State Devices and Materials, Sep 2016, Tsukuba, Japan. pp.O-3-03 FinFET and Nanowire FET
Conference papers hal-02015707v1