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authFullName_s : C. Pellissier
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Crossbar arrays based on "Wall" Phase-Change Memory (PCM) and Ovonic-Threshold Switching (OTS) selector: a device integration challenge towards new computing paradigms in embedded applications

G. Bourgeois , V. Meli , R. Antonelli , C. Socquet-Clerc , T. Magis , et al.
IEEE EDTM 2023 - 7th IEEE Electron Devices Technology and Manufacturing, IEEE, Mar 2023, SEOUL, South Korea. ⟨10.1109/EDTM55494.2023.10102961⟩
Conference papers cea-04098047v1

Investigation of HfO2/Ti based vertical RRAM - Performances and variability

G. Piccolboni , G. Molas , C. Carabasse , J. F Nodin , C. Pellissier , et al.
2014 14th Non-Volatile Memory Technology Symposium (NVMTS), Oct 2014, Jeju Island, South Korea. pp.134-138, ⟨10.1109/NVMTS.2014.7060867⟩
Conference papers hal-02049437v1
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Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications

G. Piccolboni , G. Molas , M. Portal , R. Coquand , Marc Bocquet , et al.
2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩
Conference papers hal-01804658v1
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Demonstration of BEOL-compatible ferroelectric Hf 0.5 Zr 0.5 O 2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications

T. Francois , L. Grenouillet , J. Coignus , P. Blaise , C. Carabasse , et al.
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. ⟨10.1109/IEDM19573.2019.8993485⟩
Conference papers hal-02399654v1