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Crossbar arrays based on "Wall" Phase-Change Memory (PCM) and Ovonic-Threshold Switching (OTS) selector: a device integration challenge towards new computing paradigms in embedded applications
G. Bourgeois
,
V. Meli
,
R. Antonelli
,
C. Socquet-Clerc
,
T. Magis
,
et al.
Conference papers
cea-04098047v1
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Investigation of HfO2/Ti based vertical RRAM - Performances and variability
G. Piccolboni
,
G. Molas
,
C. Carabasse
,
J. F Nodin
,
C. Pellissier
,
et al.
Conference papers
hal-02049437v1
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Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications
G. Piccolboni
,
G. Molas
,
M. Portal
,
R. Coquand
,
Marc Bocquet
,
et al.
2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩
Conference papers
hal-01804658v1
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Demonstration of BEOL-compatible ferroelectric Hf 0.5 Zr 0.5 O 2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications
T. Francois
,
L. Grenouillet
,
J. Coignus
,
P. Blaise
,
C. Carabasse
,
et al.
Conference papers
hal-02399654v1
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