%0 Conference Paper %F Oral %T Crossbar arrays based on "Wall" Phase-Change Memory (PCM) and Ovonic-Threshold Switching (OTS) selector: a device integration challenge towards new computing paradigms in embedded applications %+ Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI) %A Bourgeois, G. %A Meli, V. %A Antonelli, R. %A Socquet-Clerc, C. %A Magis, T. %A Laulagnet, F. %A Hemard, B. %A Bernard, M. %A Fellouh, L. %A Dezest, P. %A Krawczyk, J. %A Dominguez, S. %A Baudin, F. %A Garrione, J. %A Pellissier, C. %A Dallery, J.-A. %A Castellani, N. %A Cyrille, M.-C. %A Charpin, C. %A Andrieu, F. %A Navarro, G. %< avec comité de lecture %B IEEE EDTM 2023 - 7th IEEE Electron Devices Technology and Manufacturing %C SEOUL, South Korea %8 2023-03-07 %D 2023 %R 10.1109/EDTM55494.2023.10102961 %K Crossbar %K "Wall" PCM %K OTS selector) %Z Engineering Sciences [physics]/MaterialsConference papers %X In this work, we demonstrate the integration feasibility of Crossbar arrays based on Ovonic-Threshold Switching (OTS) selector and "Wall"-based Phase-Change Memory, realized with a "Double-Patterned Self-Aligned" (DPSA) structure in the Back-End-of-Line (BEOL) of the CMOS fabrication. We fabricated devices with critical dimensions down to 60 nm×80 nm, integrating materials providing improved thermal stability (against BEOL thermal budget). Preliminary statistical electrical tests performed in 1 kb 1T1S1R arrays confirm the devices correct programming and cycling operations. These results pave the way to the integration of Crossbar arrays in embedded applications. %G English %2 https://cea.hal.science/cea-04098047/document %2 https://cea.hal.science/cea-04098047/file/EDTM2023_vf_v2.pdf %L cea-04098047 %U https://cea.hal.science/cea-04098047 %~ CEA %~ OPENAIRE %~ DRT %~ LETI %~ CEA-GRE