Hybrid FeRAM/RRAM synapse circuit for on-chip inference and learning at the edge
Résumé
This paper presents an experimental demonstration of a hybrid FeRAM/RRAM synaptic circuit. The circuit incorporates Metal-Ferroelectric-Metal stacks, which exhibit native FeRAM behavior and function as RRAMs after undergoing a forming operation. By leveraging the unique advantages of FeRAMs, such as ultra-low switching energy, in combination with the non-disruptive (infinite) reading capability of RRAMs, this circuit enables efficient on-chip inference and learning at the Edge.
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