Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles Solar Energy Materials and Solar Cells Year : 2015

Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells

Abstract

Ion Beam Services (IBS) has developed processes dedicated to silicon-based solar cell manufacturing using a plasma-immersion ion implantation equipment. It enables the realization of various doping profiles for phosphorus-doped emitters which fit the requirements of high-efficiency solar cells. PH$_3$ plasma-implanted emitters are chemically, physically and electrically characterized to demonstrate their excellent quality. Those emitters are then integrated into a low cost p-type monocrystalline silicon solar cell manufacturing line from the National Solar Energy Institute (INES) in order to be compared with usual POCl$_3$ diffusion. Starting from a basic process flow with blanket emitter and conventional full-area aluminum back-surface field, plasma-immersion implanted emitters enable to raise conversion effi-ciencies above 19.1%. Thanks to an optimized double layer anti-reflective coating, a 19.4% champion cell has been achieved. Depending on different plasma process parameters, lightly doped emitters are then engineered aiming to study doping modulation using a dedicated laser.
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Dates and versions

cea-02570721 , version 1 (12-05-2020)

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Thomas Michel, Jerome Le Perchec, Adeline Lanterne, Rémi Monna, Frank Torregrosa, et al.. Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells. Solar Energy Materials and Solar Cells, 2015, 133, pp.194-200. ⟨10.1016/j.solmat.2014.11.014⟩. ⟨cea-02570721⟩
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