%0 Journal Article %T Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells %+ Institut FRESNEL (FRESNEL) %+ Ion Beam Services (IBS) %+ Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN) %+ Institut National de L'Energie Solaire (INES) %A Michel, Thomas %A Le Perchec, Jerome %A Lanterne, Adeline %A Monna, Rémi %A Torregrosa, Frank %A Roux, Laurent %A Commandre, Mireille %Z These results have been partly achieved within the PULSARCELL project supported by the French FUI. %< avec comité de lecture %@ 0927-0248 %J Solar Energy Materials and Solar Cells %I Elsevier %V 133 %P 194-200 %8 2015-02 %D 2015 %R 10.1016/j.solmat.2014.11.014 %K Ion implantation %K Plasma-immersion %K Crystalline silicon %K Solar cell %K Photovoltaics %Z Engineering Sciences [physics] %Z Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics %Z Engineering Sciences [physics]/Electric power %Z Engineering Sciences [physics]/Materials %Z Engineering Sciences [physics]/Optics / PhotonicJournal articles %X Ion Beam Services (IBS) has developed processes dedicated to silicon-based solar cell manufacturing using a plasma-immersion ion implantation equipment. It enables the realization of various doping profiles for phosphorus-doped emitters which fit the requirements of high-efficiency solar cells. PH$_3$ plasma-implanted emitters are chemically, physically and electrically characterized to demonstrate their excellent quality. Those emitters are then integrated into a low cost p-type monocrystalline silicon solar cell manufacturing line from the National Solar Energy Institute (INES) in order to be compared with usual POCl$_3$ diffusion. Starting from a basic process flow with blanket emitter and conventional full-area aluminum back-surface field, plasma-immersion implanted emitters enable to raise conversion effi-ciencies above 19.1%. Thanks to an optimized double layer anti-reflective coating, a 19.4% champion cell has been achieved. Depending on different plasma process parameters, lightly doped emitters are then engineered aiming to study doping modulation using a dedicated laser. %G English %2 https://cea.hal.science/cea-02570721/document %2 https://cea.hal.science/cea-02570721/file/Michel-2015-SolMat-%20Phosphorus%20emitter%20engineering%20by%20PIII%20for%20c-Si%20solar%20cells.pdf %L cea-02570721 %U https://cea.hal.science/cea-02570721 %~ CEA %~ UNIV-SAVOIE %~ UGA %~ CNRS %~ UNIV-AMU %~ IF %~ EC-MARSEILLE %~ DRT %~ IF-THEME-2 %~ LITEN %~ CEA-GRE %~ USMB-COMUE %~ INES