Communication Dans Un Congrès Année : 2018

Evaluation of total ionizing dose effects on commercial FRAMs

Résumé

This work evaluates the sensitivity of two commercial ferroelectric random access memories to total ionizing dose. Functional failure analysis and current measurements have been performed as a function of total ionizing dose. Results of testing under Co-60 gamma radiation show a huge difference of radiation hardness levels between FRAM references and give an idea of the most sensitive part causing failure on each memory chip. Annealing responses at room temperature have been reported.
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Dates et versions

cea-03920390 , version 1 (03-01-2023)

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Mariem Slimani, Jean-Marc Armani, Rémi Gaillard. Evaluation of total ionizing dose effects on commercial FRAMs. NSREC 2018 - IEEE Nuclear & Space Radiation Effects Conference, Jul 2018, Waikoloa Village, United States. pp.8584287, ⟨10.1109/NSREC.2018.8584287⟩. ⟨cea-03920390⟩
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