Evaluation of total ionizing dose effects on commercial FRAMs
Résumé
This work evaluates the sensitivity of two commercial ferroelectric random access memories to total ionizing dose. Functional failure analysis and current measurements have been performed as a function of total ionizing dose. Results of testing under Co-60 gamma radiation show a huge difference of radiation hardness levels between FRAM references and give an idea of the most sensitive part causing failure on each memory chip. Annealing responses at room temperature have been reported.
Mots clés
instrumentation
nuclear instrumentation
ionizing radiation
ionizing dose
dosimetry
defect
Functional failure analysis
gamma-rays
Diagnosis
radiation hardness
Annealing
Random access memory
Nonvolatile memory
Ferroelectric films
Computer architecture
Microprocessors
Radiation effects
electric current measurement
failure analysis
ferroelectric storage
gamma-ray effects
integrated circuit reliability
integrated circuit testing
radiation hardening
random-access storage
sensitivity analysis
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