On the impact of OxRAM-based synapses variability on convolutional neural networks performance
Abstract
In this work, both temporal (cycle-to-cycle) and spatial (device-to-device) variability of hafnium oxide based OxRAM cells are investigated at array level. The impact of the resistance variability on OxRAM-based convolutional neural network is then evaluated. Two different types of neurons, analog and digital, are considered. Results show that the studied architecture is strongly immune to both temporal and spatial variability.