Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs
B. Sklenard
,
P. Batude
,
Q. Rafhay
,
I. Martin-Bragado
,
C.Q. Xu
,
et al.
Journal articles
hal-01002090v1
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Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses
D. Garbin
,
O. Bichler
,
E. Vianello
,
Q. Rafhay
,
C. Gamrat
,
et al.
2014 IEEE International Electron Devices Meeting , Dec 2014, San Francisco, United States. pp.28.4.1-28.4.4,
⟨10.1109/IEDM.2014.7047126⟩
Conference papers
cea-01839848v1
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Towards 500°C SPER activated devices for 3D sequential integration
J. Micout
,
B. Sklenard
,
P. Batude
,
Rémy Berthelon
,
Quentin Rafhay
,
et al.
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) , Oct 2017, Burlingame, CA, United States. pp.24.3,
⟨10.1109/S3S.2017.8309220⟩
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hal-01959113v1
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Revisited approach for the characterization of Gate Induced Drain Leakage
Quentin Rafhay
,
Cuiqin Xu
,
Perrine Batude
,
Mireille Mouis
,
Maud Vinet
,
et al.
Journal articles
hal-01959351v1
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Light trapping and physical properties of ZnO / CdTe core shell nanowire arrays for solar cells
Vincent Consonni
,
Jerome Michallon
,
Sebastien Renet
,
Davide Bucci
,
Laetitia Rapenne
,
et al.
MRS-Fall meeting , 2014, Boston, United States
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hal-02918370v1
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HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
Daniele Garbin
,
Elisa Vianello
,
Olivier Bichler
,
Quentin Rafhay
,
Christian Gamrat
,
et al.
Journal articles
hal-01947647v1
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Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities
Klaasjan Maas
,
Edouard Villepreux
,
David Cooper
,
Carmen Jimenez
,
Hervé Roussel
,
et al.
Journal articles
hal-02428216v1
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Plasma immersion ion implantation (PIII): New path for optimizing doping profiles of advanced phosphorus emitters
Antoine Veau
,
Thibaut Desrues
,
Adeline Lanterne
,
Pierre Bellanger
,
Frank Torregrosa
,
et al.
SiliconPV 2018: 8th International Conference on Silicon Photovoltaics , Mar 2018, Lausanne, Switzerland. pp.110007,
⟨10.1063/1.5049316⟩
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hal-01959074v1
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Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment
Clement Nguyen
,
Carlo Cagli
,
Elisa Vianello
,
Alain Persico
,
Gabriel Molas
,
et al.
2015 IEEE International Integrated Reliability Workshop (IIRW) , Oct 2015, South Lake Tahoe, CA, United States. pp.17-20,
⟨10.1109/IIRW.2015.7437059⟩
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hal-01959140v1
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Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation
Diego Alfaro Robayo
,
Gilbert Sassine
,
Quentin Rafhay
,
Gérard Ghibaudo
,
Gabriel Molas
,
et al.
Journal articles
hal-02126884v1
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Precise EOT regrowth extraction enabling performance analysis of Low Temperature Extension First devices
Jessy Micout
,
Quentin Rafhay
,
Xavier Garros
,
Mikael Cassé
,
Jean Coignus
,
et al.
Conference papers
cea-01525266v1
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Simulation, élaboration et caractérisation de cellules photovoltaïques
Céline Ternon
,
Anne Kaminski
,
Delphine Constantin
,
Lionel Claudon
,
Fabien Volpi
,
et al.
Other publications
hal-01226010v1
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Characterization and Modelling of High Speed Ge Photodetectors Reliability
F. Sy
,
Q. Rafhay
,
J. Poëtte
,
G. Grosa
,
C. Besset
,
et al.
2019 IEEE International Reliability Physics Symposium (IRPS) , Mar 2019, Monterey, United States. pp.1-5
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hal-02274432v1
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Formation Mechanisms and Physical Properties of Al-doped ZnO Nanowires by Chemical Bath Deposition
C. Verrier
,
E. Appert
,
O. Chaix-Pluchery
,
L. Rapenne
,
Fares Chouchane
,
et al.
2016 E-MRS Fall Meeting: Symposium C Nano-Engineering of Materials and Interfaces: design, synthesis and applications , A. Illiberi, C. Detavernier, D. Barreca, F. Roozeboom, M. Van Bael, T. Anthopoulos, Sep 2016, Varsaw, Poland
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hal-02016936v1
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High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration
J. Micout
,
V. Lapras
,
P. Batude
,
C. Fenouillet-Beranger
,
J. Lacord
,
et al.
2017 IEEE International Electron Devices Meeting (IEDM) , Dec 2017, San Francisco, United States. pp.32.2.1-32.2.4,
⟨10.1109/IEDM.2017.8268484⟩
Conference papers
hal-01959097v1
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FDSOI devices: A solution to achieve low junction leakage with low temperature processes (≤ 650°C)
B. Sklenard
,
C. Xu
,
P. Batude
,
B. Previtali
,
C. Tabone
,
et al.
Conference papers
hal-01959376v1
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High performance CMOS FDSOI devices activated at low temperature
L. Pasini
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P. Batude
,
J. Lacord
,
M. Cassé
,
B. Mathieu
,
et al.
Conference papers
hal-01730659v1
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Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity
Gaspard Hiblot
,
Gabriel Mugny
,
Quentin Rafhay
,
Frédéric Boeuf
,
Gérard Ghibaudo
Journal articles
hal-01947645v1
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Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network
Daniele Garbin
,
Quentin Rafhay
,
Elisa Vianello
,
Simon Jeannot
,
Philippe Candelier
,
et al.
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , Jan 2015, Bologna, Italy. pp.125,
⟨10.1109/ULIS.2015.7063789⟩
Conference papers
hal-01959186v1
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Improved extraction of GIDL in FDSOI devices for proper junction quality analysis
C. Xu
,
P. Batude
,
K. Romanjek
,
C. Le Royer
,
C. Tabone
,
et al.
Conference papers
hal-01959402v1
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New parameter extraction method based on split C-V measurements in FDSOI MOSFETs
I. Ben Akkez
,
A. Cros
,
C. Fenouillet-Beranger
,
F. Boeuf
,
Q. Rafhay
,
et al.
Journal articles
hal-01002112v1
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Mise en place d'un TP de simulation, élaboration et caractérisation d'une cellule photovoltaïque de première génération.
C. Ternon
,
D. Constantin
,
A. Kaminski
,
L. Claudon
,
F. Volpi
,
et al.
11èmes Journée Pédagogiques du CNFM , Nov 2010, saint malo, France. p. 137-142 ISBN 2-9522395-3-3
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hal-00807396v1
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Tuning Memristivity by Varying the Oxygen Content in a Mixed Ionic–Electronic Conductor
Klaasjan Maas
,
Edouard Villepreux
,
David Cooper
,
Eduardo Salas-Colera
,
Juan Rubio- Zuazo
,
et al.
Journal articles
hal-02994852v1
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On the impact of OxRAM-based synapses variability on convolutional neural networks performance
D. Garbin
,
E. Vianello
,
O. Bichler
,
M. Azzaz
,
Q. Rafhay
,
et al.
2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH´15) , Jul 2015, Boston, MA, United States. pp.193-198,
⟨10.1109/NANOARCH.2015.7180611⟩
Conference papers
cea-01839851v1
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Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology
G. Hiblot
,
J. Lacord
,
M. Akbal
,
Q. Rafhay
,
F. Boeuf
,
et al.
Journal articles
hal-01947635v1
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Experimental and theoretical investigation of RRAM endurance statistical behavior
D. Alfaro Robayo
,
G. Sassine
,
Quentin Rafhay
,
Gérard Ghibaudo
,
Gabriel Molas
,
et al.
49th IEEE Semiconductor Interface Specialists Conference (SISC) , IEEE, Dec 2018, San Diego, United States. pp.13.2
Conference papers
hal-02052290v1
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Improvements in low temperature (<625°C) FDSOI devices down to 30nm gate length
C. Xu
,
P. Batude
,
M. Vinet
,
M. Mouis
,
M. Cassé
,
et al.
Conference papers
hal-01959359v1
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Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices
Gaspard Hiblot
,
Tapas Dutta
,
Quentin Rafhay
,
Joris Lacord
,
Madjid Akbal
,
et al.
Journal articles
hal-01947631v1
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Resistive memory variability: A simplified trap-assisted tunneling model
Daniele Garbin
,
Elisa Vianello
,
Quentin Rafhay
,
Mourad Azzaz
,
Philippe Candelier
,
et al.
Journal articles
hal-01947671v1
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New parameter extraction method based on split C-V for FDSOI MOSFETs
I. Ben Akkez
,
A. Cros
,
C. Fenouillet-Beranger
,
F. Boeuf
,
Quentin Rafhay
,
et al.
Conference papers
hal-01959345v1
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