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authIdHal_s : quentin-rafhay

Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs

B. Sklenard , P. Batude , Q. Rafhay , I. Martin-Bragado , C.Q. Xu , et al.
Solid-State Electronics, 2013, 88, pp.9-14. ⟨10.1016/j.sse.2013.04.018⟩
Journal articles hal-01002090v1

Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses

D. Garbin , O. Bichler , E. Vianello , Q. Rafhay , C. Gamrat , et al.
2014 IEEE International Electron Devices Meeting, Dec 2014, San Francisco, United States. pp.28.4.1-28.4.4, ⟨10.1109/IEDM.2014.7047126⟩
Conference papers cea-01839848v1

Towards 500°C SPER activated devices for 3D sequential integration

J. Micout , B. Sklenard , P. Batude , Rémy Berthelon , Quentin Rafhay , et al.
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, CA, United States. pp.24.3, ⟨10.1109/S3S.2017.8309220⟩
Conference papers hal-01959113v1

Revisited approach for the characterization of Gate Induced Drain Leakage

Quentin Rafhay , Cuiqin Xu , Perrine Batude , Mireille Mouis , Maud Vinet , et al.
Solid-State Electronics, 2012, 71, pp.37-41. ⟨10.1109/ULIS.2011.5757994⟩
Journal articles hal-01959351v1

Light trapping and physical properties of ZnO / CdTe core shell nanowire arrays for solar cells

Vincent Consonni , Jerome Michallon , Sebastien Renet , Davide Bucci , Laetitia Rapenne , et al.
MRS-Fall meeting, 2014, Boston, United States
Conference poster hal-02918370v1

HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

Daniele Garbin , Elisa Vianello , Olivier Bichler , Quentin Rafhay , Christian Gamrat , et al.
IEEE Transactions on Electron Devices, 2015, 62 (8), pp.2494-2501. ⟨10.1109/TED.2015.2440102⟩
Journal articles hal-01947647v1
Image document

Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities

Klaasjan Maas , Edouard Villepreux , David Cooper , Carmen Jimenez , Hervé Roussel , et al.
Journal of Materials Chemistry C, 2020, 8 (2), pp.464-472. ⟨10.1039/c9tc03972d⟩
Journal articles hal-02428216v1

Plasma immersion ion implantation (PIII): New path for optimizing doping profiles of advanced phosphorus emitters

Antoine Veau , Thibaut Desrues , Adeline Lanterne , Pierre Bellanger , Frank Torregrosa , et al.
SiliconPV 2018: 8th International Conference on Silicon Photovoltaics, Mar 2018, Lausanne, Switzerland. pp.110007, ⟨10.1063/1.5049316⟩
Conference papers hal-01959074v1

Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment

Clement Nguyen , Carlo Cagli , Elisa Vianello , Alain Persico , Gabriel Molas , et al.
2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, CA, United States. pp.17-20, ⟨10.1109/IIRW.2015.7437059⟩
Conference papers hal-01959140v1

Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation

Diego Alfaro Robayo , Gilbert Sassine , Quentin Rafhay , Gérard Ghibaudo , Gabriel Molas , et al.
IEEE Transactions on Electron Devices, 2019, pp.1-8. ⟨10.1109/TED.2019.2911661⟩
Journal articles hal-02126884v1
Image document

Precise EOT regrowth extraction enabling performance analysis of Low Temperature Extension First devices

Jessy Micout , Quentin Rafhay , Xavier Garros , Mikael Cassé , Jean Coignus , et al.
2017 ESSDERC - 47th European Solid-State Device Research Conference, Sep 2017, Leuven, Belgium. pp.144-147, ⟨10.1109/ESSDERC.2017.8066612⟩
Conference papers cea-01525266v1

Simulation, élaboration et caractérisation de cellules photovoltaïques

Céline Ternon , Anne Kaminski , Delphine Constantin , Lionel Claudon , Fabien Volpi , et al.
Other publications hal-01226010v1

Characterization and Modelling of High Speed Ge Photodetectors Reliability

F. Sy , Q. Rafhay , J. Poëtte , G. Grosa , C. Besset , et al.
2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.1-5
Conference papers hal-02274432v1

Formation Mechanisms and Physical Properties of Al-doped ZnO Nanowires by Chemical Bath Deposition

C. Verrier , E. Appert , O. Chaix-Pluchery , L. Rapenne , Fares Chouchane , et al.
2016 E-MRS Fall Meeting: Symposium C Nano-Engineering of Materials and Interfaces: design, synthesis and applications, A. Illiberi, C. Detavernier, D. Barreca, F. Roozeboom, M. Van Bael, T. Anthopoulos, Sep 2016, Varsaw, Poland
Conference papers hal-02016936v1

High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration

J. Micout , V. Lapras , P. Batude , C. Fenouillet-Beranger , J. Lacord , et al.
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.32.2.1-32.2.4, ⟨10.1109/IEDM.2017.8268484⟩
Conference papers hal-01959097v1

FDSOI devices: A solution to achieve low junction leakage with low temperature processes (≤ 650°C)

B. Sklenard , C. Xu , P. Batude , B. Previtali , C. Tabone , et al.
2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France. ⟨10.1109/ULIS.2012.6193384⟩
Conference papers hal-01959376v1

High performance CMOS FDSOI devices activated at low temperature

L. Pasini , P. Batude , J. Lacord , M. Cassé , B. Mathieu , et al.
2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩
Conference papers hal-01730659v1

Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

Gaspard Hiblot , Gabriel Mugny , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
IEEE Transactions on Nanotechnology, 2015, 14 (4), pp.768-775. ⟨10.1109/TNANO.2015.2444653⟩
Journal articles hal-01947645v1

Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network

Daniele Garbin , Quentin Rafhay , Elisa Vianello , Simon Jeannot , Philippe Candelier , et al.
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.125, ⟨10.1109/ULIS.2015.7063789⟩
Conference papers hal-01959186v1

Improved extraction of GIDL in FDSOI devices for proper junction quality analysis

C. Xu , P. Batude , K. Romanjek , C. Le Royer , C. Tabone , et al.
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Sep 2011, Helsinki, Finland. ⟨10.1109/ESSDERC.2011.6044183⟩
Conference papers hal-01959402v1

New parameter extraction method based on split C-V measurements in FDSOI MOSFETs

I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Boeuf , Q. Rafhay , et al.
Solid-State Electronics, 2013, 84, pp.142-146. ⟨10.1016/j.sse.2013.02.011⟩
Journal articles hal-01002112v1

Mise en place d'un TP de simulation, élaboration et caractérisation d'une cellule photovoltaïque de première génération.

C. Ternon , D. Constantin , A. Kaminski , L. Claudon , F. Volpi , et al.
11èmes Journée Pédagogiques du CNFM, Nov 2010, saint malo, France. p. 137-142 ISBN 2-9522395-3-3
Conference papers hal-00807396v1
Image document

Tuning Memristivity by Varying the Oxygen Content in a Mixed Ionic–Electronic Conductor

Klaasjan Maas , Edouard Villepreux , David Cooper , Eduardo Salas-Colera , Juan Rubio- Zuazo , et al.
Advanced Functional Materials, 2020, 30 (17), pp.1909942. ⟨10.1002/adfm.201909942⟩
Journal articles hal-02994852v1

On the impact of OxRAM-based synapses variability on convolutional neural networks performance

D. Garbin , E. Vianello , O. Bichler , M. Azzaz , Q. Rafhay , et al.
2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH´15), Jul 2015, Boston, MA, United States. pp.193-198, ⟨10.1109/NANOARCH.2015.7180611⟩
Conference papers cea-01839851v1

Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology

G. Hiblot , J. Lacord , M. Akbal , Q. Rafhay , F. Boeuf , et al.
Solid-State Electronics, 2015, 107, pp.1-7. ⟨10.1016/j.sse.2015.02.001⟩
Journal articles hal-01947635v1

Experimental and theoretical investigation of RRAM endurance statistical behavior

D. Alfaro Robayo , G. Sassine , Quentin Rafhay , Gérard Ghibaudo , Gabriel Molas , et al.
49th IEEE Semiconductor Interface Specialists Conference (SISC), IEEE, Dec 2018, San Diego, United States. pp.13.2
Conference papers hal-02052290v1

Improvements in low temperature (<625°C) FDSOI devices down to 30nm gate length

C. Xu , P. Batude , M. Vinet , M. Mouis , M. Cassé , et al.
2012 VLSI Technology, System and Application, Apr 2010, Hsinchu, Taiwan. ⟨10.1109/VLSI-TSA.2012.6210171⟩
Conference papers hal-01959359v1

Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices

Gaspard Hiblot , Tapas Dutta , Quentin Rafhay , Joris Lacord , Madjid Akbal , et al.
IEEE Transactions on Electron Devices, 2015, 62 (1), pp.28-35. ⟨10.1109/TED.2014.2368395⟩
Journal articles hal-01947631v1

Resistive memory variability: A simplified trap-assisted tunneling model

Daniele Garbin , Elisa Vianello , Quentin Rafhay , Mourad Azzaz , Philippe Candelier , et al.
Solid-State Electronics, 2016, 115, pp.126-132. ⟨10.1016/j.sse.2015.09.004⟩
Journal articles hal-01947671v1

New parameter extraction method based on split C-V for FDSOI MOSFETs

I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Boeuf , Quentin Rafhay , et al.
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Sep 2012, Bordeaux, France. ⟨10.1109/ESSDERC.2012.6343372⟩
Conference papers hal-01959345v1