Vertical Heterojunction Ge0.92 Sn0.08 /Ge GAA nanowire pMOSFETs: Low SS of 67 mV/dec, Small DIBL of 24 mV/V and Highest Gm,ext of 870 μS/μm
Résumé
We demonstrate high performance vertical heterojunction Ge$_{0.92}$ Sn$_{0.08}$/Ge gate-all-around (GAA) nanowire (NW) pMOSFETs enabled by a top-down approach, a self-limiting digital etching and NiGeSn metallization. Thanks to the GAA NW geometry and EOT scaling, low SS of 67 m V /dec, small DIBL of 24 m V/ V, and a high I ON /I$$_{OFF}$ ratio of ~10$_6$ are achieved in the smallest NW device with a diameter down to 25 nm. Furthermore, record high G$_{m,ect}$ of ~870 μS/μm and the best quality factor Q=G$_{m,ect}$/SS$_{sat}$of 9.1 are obtained for all reported GeSn-based pFETs.
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Vertical_Heterojunction_Ge0.92_Sn0.08__Ge_GAA_Nanowire_pMOSFETs_Low_SS_of_67_mV_dec_Small_DIBL_of_24_mV_V_and_Highest_Gmext_of_870_S_m.pdf (1.24 Mo)
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