Communication Dans Un Congrès Année : 2020

Vertical Heterojunction Ge0.92 Sn0.08 /Ge GAA nanowire pMOSFETs: Low SS of 67 mV/dec, Small DIBL of 24 mV/V and Highest Gm,ext of 870 μS/μm

Résumé

We demonstrate high performance vertical heterojunction Ge$_{0.92}$ Sn$_{0.08}$/Ge gate-all-around (GAA) nanowire (NW) pMOSFETs enabled by a top-down approach, a self-limiting digital etching and NiGeSn metallization. Thanks to the GAA NW geometry and EOT scaling, low SS of 67 m V /dec, small DIBL of 24 m V/ V, and a high I ON /I$$_{OFF}$ ratio of ~10$_6$ are achieved in the smallest NW device with a diameter down to 25 nm. Furthermore, record high G$_{m,ect}$ of ~870 μS/μm and the best quality factor Q=G$_{m,ect}$/SS$_{sat}$of 9.1 are obtained for all reported GeSn-based pFETs.
Fichier principal
Vignette du fichier
Vertical_Heterojunction_Ge0.92_Sn0.08__Ge_GAA_Nanowire_pMOSFETs_Low_SS_of_67_mV_dec_Small_DIBL_of_24_mV_V_and_Highest_Gmext_of_870_S_m.pdf (1.24 Mo) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

cea-04820815 , version 1 (05-12-2024)

Identifiants

Citer

Mingshan Liu, Viktoria Schlykow, Jean-Michel Hartmann, Joachim Knoch, Detlev Grutzmacher, et al.. Vertical Heterojunction Ge0.92 Sn0.08 /Ge GAA nanowire pMOSFETs: Low SS of 67 mV/dec, Small DIBL of 24 mV/V and Highest Gm,ext of 870 μS/μm. 2020 IEEE Symposium on VLSI Technology, Jun 2020, Honolulu, United States. pp.1-2, ⟨10.1109/VLSITechnology18217.2020.9265090⟩. ⟨cea-04820815⟩
14 Consultations
11 Téléchargements

Altmetric

Partager

More