Conference Papers Year : 2019

GeSn Lasers with Uniaxial Tensile Strain in the Gain Medium

Abstract

We use strain redistribution to locally enhance strain in GeSn layers. We demonstrate uniaxial tensile strain in microbridges with lasing cavities tuned over the 3.1 to 4.6 m range, and thresholds lower than 10 kW.cm-2 at 25K, in pulsed excitation mode. Laser operation vanishes around 273K.

Keywords

GeSn laser strain tunability

Domains

Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Optics / Photonic

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https://cea.hal.science/cea-04785903

Submitted on : Friday, November 15, 2024-4:05:44 PM

Last modification on : Monday, December 9, 2024-1:42:36 PM

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Dates and versions

cea-04785903 , version 1 (15-11-2024)

Identifiers

Cite

Mathieu Bertrand, Francesco Armand Pilon, Vincent Reboud, Hans Sigg, Quang-Minh Thai, et al.. GeSn Lasers with Uniaxial Tensile Strain in the Gain Medium. 2019 IEEE 16th International Conference on Group IV Photonics (GFP), Aug 2019, Singapore, Singapore. pp.1-2, ⟨10.1109/GROUP4.2019.8853899⟩. ⟨cea-04785903⟩

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