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Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challengesApplied Surface Science, 2018, 445, pp.77-80. ⟨10.1016/j.apsusc.2018.03.104⟩
Journal articles
hal-01947859v1
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Local lateral integration of 16-nm thick Ge nanowires on silicon on insulator substratesApplied Physics Letters, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Journal articles
cea-02185226v1
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Correlation between strain and maximum lasing temperature in GeSn microbridgesIPC 2020 - 2020 IEEE Photonics Conference, Sep 2020, Vancouver, Canada. pp.1-2, ⟨10.1109/IPC47351.2020.9252430⟩
Conference papers
cea-03096049v1
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