Post-deposition annealing challenges for ALD Al$_{0.5}$Si$_{0.5}$O$_x$/n-GaN MOS devices - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Accéder directement au contenu
Article Dans Une Revue Solid-State Electronics Année : 2023

Post-deposition annealing challenges for ALD Al$_{0.5}$Si$_{0.5}$O$_x$/n-GaN MOS devices

Résumé

In this work, we investigate the impact of high-temperature Post-Deposition annealing (PDA) on AlAl$_{0.5}$Si$_{0.5}$O$_x$ deposited by Atomic Layer Deposition (ALD). Reversed hysteresis is observed and explained by mobile charges originating from K$^+$ and Na$^+$ impurities. The high-temperature annealing does not cure the presence of these mobile charges. We also report the onset of film and interface degradation after annealing above 750°C under N$_2$, with both inhomogeneous aluminium and silicon composition, signs of AlSiO crystallization and interfacial gallium oxide growth.
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cea-04557061 , version 1 (24-04-2024)

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Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Messaoud Bedjaoui, Stephane Cadot, Blend Mohamad, et al.. Post-deposition annealing challenges for ALD Al$_{0.5}$Si$_{0.5}$O$_x$/n-GaN MOS devices. Solid-State Electronics, 2023, 209, pp.108780. ⟨10.1016/j.sse.2023.108780⟩. ⟨cea-04557061⟩
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