CMOS pixel circuit for GaN micro-LED control in Very High Luminance Applications
Résumé
GaN micro-LED technology offers high luminance level, which is a strong requirement for microdisplays used in
augmented reality, as well as large display applications. Their electro-optical characteristics differ from the
commonly-used OLEDs. So new circuitry with higher driving capabilities for the pixel control needs to be developed. This paper discusses the architecture of such a CMOS pixel, suited for GaN micro-LED control.
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