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Communication Dans Un Congrès Année : 2018

Improved electronic properties of p-epitaxial layers grown on HPHT (100) substrates after a surface pretreatment

Résumé

Single-crystal diamond synthesis of high crystaliine quality remains de challenge for power electronic devices. Reaching very smooth substrate surface before Chemical Vapour Deposition (CVD) growth is primordial to better control the crystalline quality of diamond epitaxial layers. We investigaed the effect of Ar/O2 etching on substrates by optimizing the RF-power, the pressure and the O2 content in regard to the etching rate and RMS roughness. Pretreatment efficiency was evaluated by the enhancement of crystalline quality using Raman spectroscopy and High-Resolution X-ray Diffraction.
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Dates et versions

cea-04162058 , version 1 (13-07-2023)

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  • HAL Id : cea-04162058 , version 1

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Cyrille Barbay, Christine Mer-Calfati, Nicolas Tranchant, Samuel Saada, Jean-Charles Arnault, et al.. Improved electronic properties of p-epitaxial layers grown on HPHT (100) substrates after a surface pretreatment. SBDD XXIII - Hasselt Diamond Workshop 2018, Hasselt university, Mar 2018, Hasselt (Belgium), Belgium. pp.147. ⟨cea-04162058⟩
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