Improved electronic properties of p-epitaxial layers grown on HPHT (100) substrates after a surface pretreatment
Résumé
Single-crystal diamond synthesis of high crystaliine quality remains de challenge for power electronic devices. Reaching very smooth substrate surface before Chemical Vapour Deposition (CVD) growth is primordial to better control the crystalline quality of diamond epitaxial layers.
We investigaed the effect of Ar/O2 etching on substrates by optimizing the RF-power, the pressure and the O2 content in regard to the etching rate and RMS roughness. Pretreatment efficiency was evaluated by the enhancement of crystalline quality using Raman spectroscopy and High-Resolution X-ray Diffraction.
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