Influence of substrate resistivity on porous silicon small-signal RF properties
Résumé
This article provides guidelines to design porous silicon (PS) layers regarding optimization of small signal properties in passive structures for radio frequency (RF): insertion loss and crosstalk. Results are based on high-frequency measurements on 200-mm wafers and electromagnetic simulations up to 40 GHz. Using substrate resistivity below 1 Ohm.cm allows the best tradeoff with minimized PS thickness.
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