Communication Dans Un Congrès Année : 2020

Y-unction based methodology for accurate statistical extraction of HEMT device parameters for GaN technology

Résumé

We develop a new protocol based on Y-function for accurate statistical extraction of electrical parameters of High Electron Mobility Transistor (HEMT) devices for GaN technology. Relevant electrical parameters such as oxide capacitance, threshold voltage, effective mobilities and access resistance are extracted. This protocol has been verified over a large range of channel lengths for two normally-off device HEMT GaN wafers having different levels of access resistances.

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Dates et versions

cea-03167130 , version 1 (11-03-2021)

Identifiants

Citer

R. Kom Kammeugne, Romeo Kom Kammeugne, Charles Leroux, Jacques Cluzel, Laura Vauche, et al.. Y-unction based methodology for accurate statistical extraction of HEMT device parameters for GaN technology. EUROSOI-ULIS 2020 - Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Sep 2020, Caen, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS49407.2020.9365637⟩. ⟨cea-03167130⟩
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