Y-Function Based Methodology for Accurate Statistical Extraction of HEMT Device Parameters for GaN Technology - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Conference Papers Year : 2020

Y-Function Based Methodology for Accurate Statistical Extraction of HEMT Device Parameters for GaN Technology

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cea-03167130 , version 1 (11-03-2021)

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R. Kom Kammeugne, Romeo Kom Kammeugne, Charles Leroux, Jacques Cluzel, Laura Vauche, et al.. Y-Function Based Methodology for Accurate Statistical Extraction of HEMT Device Parameters for GaN Technology. 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Sep 2020, Caen, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS49407.2020.9365637⟩. ⟨cea-03167130⟩
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