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Ultra-fast CV methods (< 10µs) for interface trap spectroscopy and BTI reliability characterization using MOS capacitorsIEEE International Reliability Physics Symposium (IRPS 2022), Mar 2022, Dallas, United States. ⟨10.1109/IRPS48227.2022.9764550⟩
Conference papers
hal-04065065v1
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Y-Function Based Methodology for Accurate Statistical Extraction of HEMT Device Parameters for GaN Technology2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Sep 2020, Caen, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS49407.2020.9365637⟩
Conference papers
cea-03167130v1
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Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential MethodIEEE Transactions on Electron Devices, In press, pp.1-5. ⟨10.1109/TED.2020.3015466⟩
Journal articles
cea-02972351v1
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