Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Access content directly
Journal Articles Microelectronics Reliability Year : 2020

Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications

Abstract

In this work, we propose a reliability analysis targeting the evaluation of the suitability of a Phase-Change Memory (PCM) device for Storage Class Memory (SCM) applications. Thanks to the analysis of programming and endurance characteristics in single devices and 4kb arrays we compare two different GeTe and GeSbTe ($\alpha$GST) based PCM. The evolution of the phase-change material along cycling is explained by the analysis of subthreshold characteristics and analytical equations based on experimental data for the description of electrical parameters evolution are given. An extrapolation method to evaluate endurance at more than 10$^9$ cycles required for SCM is described and applied, showing the intrinsic high endurance capability and suitability for SCM applications of $\alpha$GST wrt GeTe.
Fichier principal
Vignette du fichier
Manuscript File submitted for review.pdf (504.79 Ko) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

cea-03086418 , version 1 (04-01-2021)

Identifiers

Cite

G. Lama, G. Bourgeois, M. Bernard, N. Castellani, J. Sandrini, et al.. Reliability analysis in GeTe and GeSbTe based phase-change memory 4 kb arrays targeting storage class memory applications. Microelectronics Reliability, 2020, 114, pp.113823. ⟨10.1016/j.microrel.2020.113823⟩. ⟨cea-03086418⟩

Collections

CEA
31 View
88 Download

Altmetric

Share

Gmail Facebook X LinkedIn More