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https://cea.hal.science/cea-01998244
Submitted on : Tuesday, January 29, 2019-3:04:32 PM
Last modification on : Friday, March 24, 2023-2:53:09 PM
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- HAL Id : cea-01998244 , version 1
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Virginie Brouzet, Bassem Salem, Priyanka Periwal, Thierry Baron, Franck Bassani, et al.. Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration. 2015 MRS Spring Meeting & Exhibit: Symposium S: Semiconductor Nanowires and Devices for Advanced Applications, J. Arbiol, K. Dick Thelander, M. Filler, A. Fontcuberta, Q. Xiong, Apr 2015, San Francisco, United States. ⟨cea-01998244⟩
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