@inproceedings{brouzet:cea-01998244, TITLE = {{Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration}}, AUTHOR = {Brouzet, Virginie and Salem, Bassem and Periwal, Priyanka and Baron, Thierry and Bassani, Franck and Gentile, P. and Ghibaudo, G{\'e}rard}, URL = {https://cea.hal.science/cea-01998244}, NOTE = {session S6.09}, BOOKTITLE = {{2015 MRS Spring Meeting \& Exhibit: Symposium S: Semiconductor Nanowires and Devices for Advanced Applications}}, ADDRESS = {San Francisco, United States}, ORGANIZATION = {{J. Arbiol, K. Dick Thelander, M. Filler, A. Fontcuberta, Q. Xiong}}, HAL_LOCAL_REFERENCE = {CMNE}, YEAR = {2015}, MONTH = Apr, HAL_ID = {cea-01998244}, HAL_VERSION = {v1}, }