%0 Conference Paper %F Oral %T Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration %+ Laboratoire des technologies de la microélectronique (LTM) %+ Silicon Nanoelectronics Photonics and Structures (SiNaps) %+ Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC) %A Brouzet, Virginie %A Salem, Bassem %A Periwal, Priyanka %A Baron, Thierry %A Bassani, Franck %A Gentile, P. %A Ghibaudo, Gérard %Z session S6.09 %< avec comité de lecture %Z CMNE %B 2015 MRS Spring Meeting & Exhibit: Symposium S: Semiconductor Nanowires and Devices for Advanced Applications %C San Francisco, United States %8 2015-04-06 %D 2015 %Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] %Z Engineering Sciences [physics]/Electric power %Z Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics %Z Engineering Sciences [physics]/MaterialsConference papers %G English %L cea-01998244 %U https://cea.hal.science/cea-01998244 %~ CEA %~ UNIV-SAVOIE %~ UGA %~ CNRS %~ UNIV-GRENOBLE1 %~ INPG %~ IMEP-LAHC %~ LTM %~ NANOMATERIALS %~ INAC-SP2M %~ DSM-INAC %~ CEA-DRF %~ IRIG %~ CEA-GRE %~ USMB-COMUE