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Article Dans Une Revue Surfaces and Interfaces Année : 2022

Comprehensive investigation of Er$_2$O$_3$ thin films grown with different ALD approaches

H. Merabet

Résumé

The effect of Er precursor nature (Er(CpMe)$_3$ or Er(tmhd)$_3$) and annealing treatment at 500-1100°C on the structural and optical properties of Er$_2$O$_3$ films grown on Si substrates by thermal or O$_2$-plasma-assisted atomic layer deposition (ALD) was studied by means of spectroscopic ellipsometry, Fourier-transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy coupled with energy dispersive X-ray spectroscopy as well as photoluminescence method. An annealing at 500-800°C results in the film crystallization mainly. Thermal treatment at high temperatures causes the formation of Er silicate phase due to the diffusion of Si atoms from the substrate in the films depth. This phase was found to be Er$_2$SiO$_5$ being crystallized at 1100°C. Light emitting properties of the films are determined by Er$_2$O$_3$ native defects (like oxygen vacancies) and intra-4f shell transition in Er$^{3+}$ ions. The latter dominates in the films annealed at 1000-1100°C. The most intense Er3+ emission, observed in the films grown with O$_2$-plasma-assisted ALD approach, was explained by a lower contribution of oxygen vacancies as well as by pronounced crystallization of Er silicate phase. In this latter the effect of concentration quenching of Er$^{3+}$ luminescence was lower due to a larger distance between Er$^{3+}$ neighbor ions.
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hal-03790146 , version 1 (24-05-2024)

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L. Khomenkova, H. Merabet, M.-P. Chauvat, C. Frilay, X. Portier, et al.. Comprehensive investigation of Er$_2$O$_3$ thin films grown with different ALD approaches. Surfaces and Interfaces, 2022, 34, pp.102377. ⟨10.1016/j.surfin.2022.102377⟩. ⟨hal-03790146⟩
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