The advantages of III-V semiconductors such as their direct gap and high charge carrier mobility make them interesting for optoelectronics applications, high-frequency transistors (HBTs) and high electron mobility transistors (HEMTs) [1]. Although the growth of heterostructures such as In0,53Ga0,47As on InP has a tuned lattice parameter, interdiffusion of the main elements and dopants can reduce device performance. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) has proved ideal for studying buried interfaces [2]. For III-V semiconductors, the choice of abrasion gun and analyzer polarity is a key factor in achieving good ionization efficiency of the elements to be monitored [3]. For such materials, for example, it has been shown that using a dioxygen gun (O2+) for sputtering results in depth resolution degradation due to the formation of an oxide layer at the bottom of the crater [4]. In this presentation, we'll show how the use of two analyzer polarities and the choice of abrasion and analysis guns (Cs+ and Bi3+) enable complete monitoring of the main elements, dopants and impurities in heterostructures such as In0,53Ga0,47As/InP/InAlAs/InP. We’ll compare TOF-SIMS analyses using Cs+ and O2+ sputtering sources. From AFM images of the crater formed, we obtain roughness values around 2 and 6 nm using the Cs+ and O2+ sources respectively. This difference is due to the formation of an oxide layer at the bottom of the crater in the case of the O2+ source, which destroys depth resolution. High-energy photoelectron spectroscopy (HAXPES) with a chromium source Cr Kα (hν=5415 eV) [5] will be used to quantify the elemental composition and investigate chemical environments at the buried InGaAs/InP interface, showing for instance the absence of interfacial oxidation.