85 fs R ON×C OFF and CP 1dB@28GHz > 25dBm innovative PIN diode integrated in 55 nm BiCMOS technology targeting mmW 5G and 6G front end module
Abstract
In this paper, an innovative PIN diode architecture is proposed and implemented in a 55 nm BiCMOS technology. While ensuring a reverse breakdown voltage <; -11 V, a state-of-the-art RON × COFF of 85 fs is achieved and benchmarked with the literature. Those excellent performances pave the way for the development of high performances and highly integrated 5G and 6G millimeter Wave (mmW) Front-End Modules (FEM) in advanced BiCMOS technologies.