Communication Dans Un Congrès Année : 2021

85 fs R ON×C OFF and CP 1dB@28GHz > 25dBm innovative PIN diode integrated in 55 nm BiCMOS technology targeting mmW 5G and 6G front end module

Résumé

In this paper, an innovative PIN diode architecture is proposed and implemented in a 55 nm BiCMOS technology. While ensuring a reverse breakdown voltage <; -11 V, a state-of-the-art RON × COFF of 85 fs is achieved and benchmarked with the literature. Those excellent performances pave the way for the development of high performances and highly integrated 5G and 6G millimeter Wave (mmW) Front-End Modules (FEM) in advanced BiCMOS technologies.

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Electronique
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Dates et versions

cea-04827279 , version 1 (09-12-2024)

Identifiants

Citer

O. Foissey, F. Gianesello, V. Gidel, C. Durand, A. Gauthier, et al.. 85 fs R ON×C OFF and CP 1dB@28GHz > 25dBm innovative PIN diode integrated in 55 nm BiCMOS technology targeting mmW 5G and 6G front end module. SiRF 2021 - IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Jan 2021, San Diego, United States. pp.40-43, ⟨10.1109/SiRF51851.2021.9383348⟩. ⟨cea-04827279⟩
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