Communication Dans Un Congrès Année : 2022

65nm RFSOI power amplifier transistor ageing at mm W frequencies, 14 GHz and 28 GHz

Résumé

RF performance and reliability of Stand-Alone (SA) MOS devices and stacked Power Amplifier (PA) cells have been deeply investigated. Ageing of device DC and RF large signal performance is very well modelled considering V T & R d drift due to Hot Carrier Injection (HCI). The PA transistor presents also a very good immunity against TDDB when operating under most of RF 5G modulations signals. Interstacked PA cell offers better trade-off performance vs reliability than Stacked and SA devices.
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Dates et versions

cea-04827191 , version 1 (09-12-2024)

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A. Divay, J. Forest, V. Knopik, J. Hai, N. Revil, et al.. 65nm RFSOI power amplifier transistor ageing at mm W frequencies, 14 GHz and 28 GHz. 2021 IEEE International Electron Devices Meeting (IEDM), Dec 2021, San Francisco, United States. pp.39.3.1-39.3.4, ⟨10.1109/IEDM19574.2021.9720531⟩. ⟨cea-04827191⟩
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