65nm RFSOI power amplifier transistor ageing at mm W frequencies, 14 GHz and 28 GHz
Résumé
RF performance and reliability of Stand-Alone (SA) MOS devices and stacked Power Amplifier (PA) cells have been deeply investigated. Ageing of device DC and RF large signal performance is very well modelled considering V T & R d drift due to Hot Carrier Injection (HCI). The PA transistor presents also a very good immunity against TDDB when operating under most of RF 5G modulations signals. Interstacked PA cell offers better trade-off performance vs reliability than Stacked and SA devices.