Communication Dans Un Congrès Année : 2021

Si/Si 0.7 Ge 0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM applications

Résumé

A2RAM devices are fabricated using an adaptation of Si-Nanowire process flow. They include a Si-SiGe heterostructure to improve memory performance. Even the device structure is not exactly what we expect, we succeed to evidence 1T-DRAM programming.
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Dates et versions

cea-04822891 , version 1 (06-12-2024)

Identifiants

Citer

J. Lacord, F. Tcheme Wakam, Z. Chalupa, J.-M. Hartmann, P. Besson, et al.. Si/Si 0.7 Ge 0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM applications. EuroSOI-ULIS 2021 - Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Sep 2021, Caen, France. pp.1-4, ⟨10.1109/EuroSOI-ULIS53016.2021.9560676⟩. ⟨cea-04822891⟩
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