Si/Si 0.7 Ge 0.3 A2RAM nanowires fabrication and characterization for 1T-DRAM applications
Abstract
A2RAM devices are fabricated using an adaptation of Si-Nanowire process flow. They include a Si-SiGe heterostructure to improve memory performance. Even the device structure is not exactly what we expect, we succeed to evidence 1T-DRAM programming.