Multi-energy X-ray metrology in semiconductor environment - CEA - Commissariat à l’énergie atomique et aux énergies alternatives
Conference Papers Year : 2024

Multi-energy X-ray metrology in semiconductor environment

Abstract

We are living in a very interesting moment with the emergence of new X-ray analytical tools that meet the tight requirements of inline metrology of ultrathin materials and multilayers stacks in highly demanding semiconductor environment. These tools, based on X-ray fluorescence or X-ray photoemission spectroscopy, combine multiple monochromatic primary energies along with angle-dependent capability, which extends the range of XPS to buried interfaces, improves the sensitivity of XRF analysis and permits to reveal and monitor elemental depth-distribution with industry-driven accuracy. We will illustrate the use of multi-energy X-ray tools to address the challenges of inline metrology of 2D transition metal chalcogenides, complex high-k metal gate stacks for advanced CMOS and innovative non-volatile memory.
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Dates and versions

cea-04821989 , version 1 (05-12-2024)

Identifiers

  • HAL Id : cea-04821989 , version 1

Cite

Emmanuel Nolot, Yann Mazel. Multi-energy X-ray metrology in semiconductor environment. EXRS 2024 - European X-Ray Spectrometry Conference, Jun 2024, Athènes, Greece. ⟨cea-04821989⟩
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