Short range optical communication with GaN-on-Si microLED and microPD matrices - CEA - Commissariat à l’énergie atomique et aux énergies alternatives
Article Dans Une Revue Journal of the Society for Information Display Année : 2024

Short range optical communication with GaN-on-Si microLED and microPD matrices

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(In)GaN microLEDs have reached a high degree of maturity due to their devel-opment in the lighting industry. Their robustness and high efficiency makethem ideal candidates for high-brightness, high-resolution micro-displays.Beyond display applications, microLEDs are being explored for non-displayuses, including wireless Visible Light Communication (VLC) and parallelcommunication via multicore fiber. This study investigates short-range chip-to-chip optical communication using InGaN/GaN microLEDs and micro Pho-todiodes (microPDs). Leveraging processes developed for micro-displays, weaddress the challenges of integrating GaN microLEDs and microPDs on ASICs.We outline the main figures of merit, including expected energy efficiency,optical coupling to multicore fibers or waveguides, and the spectral efficiencyof InGaN/GaN microPDs correlated with TCAD simulation and experimentaltransmission results. Our study highlights the potential of GaN microLEDsand microPDs for massively parallel, energy-efficient data transmission, pavingthe way for innovative short-range and energy-efficient optical communicationsolutions.
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cea-04768418 , version 1 (06-11-2024)

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Patrick Le Maitre, Anthony Cibie, Fabian Rol, Stephanie Jacob, Nicolas Michit, et al.. Short range optical communication with GaN-on-Si microLED and microPD matrices. Journal of the Society for Information Display, 2024, SPECIAL SECTION PAPER, pp.1-18. ⟨10.1002/jsid.2012⟩. ⟨cea-04768418⟩
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