Germanium surface segregation in highly doped Ge:β-Ga2O3 grown by molecular beam epitaxy observed by synchrotron radiation hard x-ray photoelectron spectroscopy - CEA - Commissariat à l’énergie atomique et aux énergies alternatives
Journal Articles Applied Physics Letters Year : 2024

Germanium surface segregation in highly doped Ge:β-Ga2O3 grown by molecular beam epitaxy observed by synchrotron radiation hard x-ray photoelectron spectroscopy

Abstract

We present a study of Ge segregation at the surface of highly germanium-doped gallium oxide (2.5 × 1020 cm−3 nominal doping level) grown by molecular beam epitaxy. We probed the dopant concentration as a function of depth by hard x-ray photoelectron spectroscopy and standard laboratory photoemission spectroscopy. We notably found that there is germanium segregation within the top 2 nm where its concentration is 3 times the nominal doping level. This increased dopant concentration leads to a threefold enhancement of surface conductivity. The results suggest a reliable method for delta doping for power electronics applications.
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cea-04767774 , version 1 (05-11-2024)

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Anthony Boucly, Tyson Back, Thaddeus Asel, Brenton Noesges, Prescott Evans, et al.. Germanium surface segregation in highly doped Ge:β-Ga2O3 grown by molecular beam epitaxy observed by synchrotron radiation hard x-ray photoelectron spectroscopy. Applied Physics Letters, 2024, 125 (19), ⟨10.1063/5.0220212⟩. ⟨cea-04767774⟩
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