Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs
Abstract
The reconstruction of thick GeSn crystalline layers implanted with phosphorus is explored. Our study demonstrates (i) the potential for recrystallizing amorphized GeSn crystal under specific conditions and (ii) functional LEDs incorporating an ex-situ doped GeSn injection layer. Mid-infrared direct band-gap light-emitting diodes are compared with either ex-situ GeSn:P or in-situ Ge:P top contact layers.