Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs - CEA - Commissariat à l’énergie atomique et aux énergies alternatives
Article Dans Une Revue Materials Science in Semiconductor Processing Année : 2024

Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs

V. Calvo

Résumé

The reconstruction of thick GeSn crystalline layers implanted with phosphorus is explored. Our study demonstrates (i) the potential for recrystallizing amorphized GeSn crystal under specific conditions and (ii) functional LEDs incorporating an ex-situ doped GeSn injection layer. Mid-infrared direct band-gap light-emitting diodes are compared with either ex-situ GeSn:P or in-situ Ge:P top contact layers.
Fichier non déposé

Dates et versions

cea-04765151 , version 1 (04-11-2024)

Identifiants

Citer

L. Casiez, C. Cardoux, P. Acosta Alba, N. Bernier, J. Richy, et al.. Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs. Materials Science in Semiconductor Processing, 2024, 182, pp.108654. ⟨10.1016/j.mssp.2024.108654⟩. ⟨cea-04765151⟩
20 Consultations
0 Téléchargements

Altmetric

Partager

More