Direct Band Gap Ge 0.85 Sn 0.15 Photodiodes for Room Temperature Gas Sensing - CEA - Commissariat à l’énergie atomique et aux énergies alternatives
Communication Dans Un Congrès Année : 2023

Direct Band Gap Ge 0.85 Sn 0.15 Photodiodes for Room Temperature Gas Sensing

V. Calvo

Résumé

Ge 0.85 Sn 0.15 -based stacks were grown by reduced pressure chemical vapor deposition on 200 mm Si wafers. The resulting photodiodes showed detectivities above 10 8 cm.H z 1/2 .W −1 at 1.55 µm and a cutoff wavelength of 3.5 µm. This detection range opens up promising perspectives for future all-group-IV gas sensors.
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Dates et versions

cea-04754074 , version 1 (25-10-2024)

Identifiants

Citer

C. Cardoux, L. Casiez, M. Frauenrath, N. Pauc, V. Calvo, et al.. Direct Band Gap Ge 0.85 Sn 0.15 Photodiodes for Room Temperature Gas Sensing. 2023 IEEE Silicon Photonics Conference (SiPhotonics), Apr 2023, Washington, United States. pp.1-2, ⟨10.1109/SiPhotonics55903.2023.10141903⟩. ⟨cea-04754074⟩
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