Direct Band Gap Ge 0.85 Sn 0.15 Photodiodes for Room Temperature Gas Sensing
Résumé
Ge 0.85 Sn 0.15 -based stacks were grown by reduced pressure chemical vapor deposition on 200 mm Si wafers. The resulting photodiodes showed detectivities above 10 8 cm.H z 1/2 .W −1 at 1.55 µm and a cutoff wavelength of 3.5 µm. This detection range opens up promising perspectives for future all-group-IV gas sensors.