An industrially compatible process for the fabrication of superconducting monocrystalline Si films
Résumé
We report an industrially compatible process for the fabrication of superconducting monocrystalline Si films (~ 30 nm thick). Increasing the boron implant energy by only one keV enables superconductivity in monocrystalline films and makes the critical temperature increase up to 390 mK. Time-Resolved-Reflectometry appears as an adequate in-line characterization to identify the most promising process conditions.