Communication Dans Un Congrès Année : 2023

The influence of Sb/Te ratio on the crystallization dynamic of GeSbTe alloys

Résumé

Phase-Change Memory (PCM) has proven to meet the demands of completely different applications in terms of specifications, such as Storage Class and automotive market. This was possible in particular thanks to the engineering of the stoichiometry of GeSbTe materials. The alloys based on a stoichiometry close to the GeTe-Sb2Te3 tie-line show a “nucleation-dominated” behavior with multiple phase-crystallization steps, while alloys enriched in Sb content show a single-phase “growth-dominated” crystallization [1]. In this study, we investigate the transition from the amorphous to crystalline state in several compositions based on Ge, Sb, and Te, varying the Sb/Te ratio from lower to higher than one. We conducted our experiment by performing Raman spectroscopy, X-ray diffraction (XRD) and resistivity measurements as a function of the temperature. We provide for the first time at our knowledge, some insights into the vibrational states evolution dependency on Sb/Te ratio in GeSbTe system. We support our results with the measurements of the lattice parameters of the crystalline structures and with ab-initio simulations. Based on our results, we support the key role of Sb/Te ratio into the crystallization dynamic of GeSbTe system. [1] G. D’Arrigo et al., J.MSSP, v.65, 100-107, 2017
Fichier principal
Vignette du fichier
Abstract_CIMTEC 2024_OD.pdf (106.25 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

cea-04687388 , version 1 (04-09-2024)

Identifiants

  • HAL Id : cea-04687388 , version 1

Citer

Emmanuel Nolot, Gabriele Navarro, Hubert Renevier, Frederic Fillot, Jing Li, et al.. The influence of Sb/Te ratio on the crystallization dynamic of GeSbTe alloys. CIMTEC 2024, Jun 2024, Montecatini Terme, Italy. ⟨cea-04687388⟩
76 Consultations
14 Téléchargements

Partager

More