Study of Ge-rich GST device-dependent segregation aimed to the optimization of industrial grade embedded PCM
Abstract
Ge-rich GST (GGST) alloys are the most promising materials for phase-change memory (PCM) in embedded applications, being able to fulfill the tough data retention requirements of automotive and consumer markets. GGST alloys are sensitive to thermal budgets and spa-tial confinement; thus, memory device process integration and architecture can strongly im-pact their final electrical properties and reliability. In this work, we will show how to moni-tor and control architecture, material and process-induced GGST modification, in order to exploit these modulations to meet the challenges of embedded technologies.
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