Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment.
Résumé
In this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaNon-GaN Schottky diode is explored by I-V and C-V characterisation. TMAH surface treatment leads to an improvement in the forward and reverse characteristics of
the device and improvement in breakdown voltage (BV) by almost 200V compared to just HF treated sample. Additional XPS characterisations reveals reduction in both O and C concentration due to TMAH treatment.
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