Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment. - CEA - Commissariat à l’énergie atomique et aux énergies alternatives
Poster De Conférence Année : 2024

Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment.

Résumé

In this study, the impact of surface treatment by TMAH and HF on the electrical characteristics of GaNon-GaN Schottky diode is explored by I-V and C-V characterisation. TMAH surface treatment leads to an improvement in the forward and reverse characteristics of the device and improvement in breakdown voltage (BV) by almost 200V compared to just HF treated sample. Additional XPS characterisations reveals reduction in both O and C concentration due to TMAH treatment.
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Dates et versions

cea-04667618 , version 1 (05-08-2024)

Identifiants

  • HAL Id : cea-04667618 , version 1

Citer

Vishwajeet Maurya, Daniel Alquier, Hala El Rammouz, Pedro Fernandes Paes Pinto Rocha, Eugénie Martinez, et al.. Low leakage and high breakdown voltage GaN-on-GaN Schottky diode by TMAH surface treatment.. GaN Marathon 2024, Jun 2024, Verona, Italy. 2024. ⟨cea-04667618⟩
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