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Article Dans Une Revue ACS Applied Electronic Materials Année : 2024

Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films

Résumé

Germanium Telluride (GeTe), identified as a ferroelectric Rashba semiconductor, is a promising candidate for novel electronic devices in computing and memory applications. However, its ferroelectric switching in a microscopic scale remains to be understood. Here, we propose that the migration of a domain wall can be the mechanism that mediates the ferroelectric switching. By employing ab initio methods, such a mechanism is characterized by an energy barrier of 66.8 meV/nm^{2}, in a suitable range for retention and switchability. In accompanying the domain wall migration, the net Rashba effect is tunable, as it is a result of competition between layers with opposite electric polarization. These results shed light on the ferroelectric switching mechanism in GeTe, paving stones for the design of potential GeTe-based devices.
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Dates et versions

cea-04618102 , version 1 (20-06-2024)

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Libor Vojacek, Mair Chshiev, Jing Li. Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films. ACS Applied Electronic Materials, 2024, 6, pp.3754. ⟨10.1021/acsaelm.4c00392⟩. ⟨cea-04618102⟩
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