A methodology to address RF aging of 40nm CMOS PA cells under 5G mmW modulation profiles
Résumé
A methodology to link continuous wave (CW) RF stresses to complex missions profiles is presented. The performance/reliability compromise of a stand-alone transistor and two cascode cells is compared versus bias and versus different 5G-FR2 modulation schemes, with better lifetime estimated when using the most complex modulations. VT drift correction is found to be a powerful tool to increase transistor HCI lifetime under Power Amplifier (PA) operation.
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