Communication Dans Un Congrès Année : 2024

A methodology to address RF aging of 40nm CMOS PA cells under 5G mmW modulation profiles

S. Crémer
  • Fonction : Auteur

Résumé

A methodology to link continuous wave (CW) RF stresses to complex missions profiles is presented. The performance/reliability compromise of a stand-alone transistor and two cascode cells is compared versus bias and versus different 5G-FR2 modulation schemes, with better lifetime estimated when using the most complex modulations. VT drift correction is found to be a powerful tool to increase transistor HCI lifetime under Power Amplifier (PA) operation.
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Dates et versions

cea-04557422 , version 1 (24-04-2024)

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Alexis Divay, Cedric Dehos, Jasmina Antonijevic, Ismael Charlet, Joycelyn Hai, et al.. A methodology to address RF aging of 40nm CMOS PA cells under 5G mmW modulation profiles. IRPS 2024 - 2024 IEEE International Reliability Physics Symposium, Apr 2024, Dallas, United States. pp.1, ⟨10.1109/IRPS48228.2024.10529462⟩. ⟨cea-04557422⟩
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