Data detention insights from joint analysis on BEOL-integrated HZO-based scaled FeCAPs and 16kbit 1T-1C FeRAM arrays
Résumé
Extensive data retention measurements are performed on HZO-based BEOL-integrated scaled ferroelectric capacitors (FeCAPs) and 16kbit 1T-1C FeRAM arrays for the first time. At FeCAP level, Opposite State (OS) retention is strongly degraded by imprint occurring during bake with 0.2eV activation energy (EA) and affecting equally ‘0’ and ‘1’ states. At 3MV/cm – 125°C, imprint is also responsible for degraded Same State (SS) and New Same State (NSS). At FeRAM-array level, post-bake distributions are reconstructed, and SS and OS ‘0’ and ‘1’ states drifts along bake time and temperature are consistent with single device data (EA = 0.19eV). These drifts are attributed to imprint and are demonstrated to be partly recoverable through bipolar cycling.
Domaines
Chimie-Physique [physics.chem-ph]Origine | Fichiers produits par l'(les) auteur(s) |
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