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Communication Dans Un Congrès Année : 2023

Advanced TCAD modeling of HfO$_2$-based ReRAM: voupling redox reactions and thermal effects

Résumé

This paper presents a TCAD modeling approach for HfO2-based ReRAM (Resistive Random Access Memory). For describing the switching and retention behaviors of a ReRAM cell, the proposed model includes the essential redox reactions coupled to an electron transport model and to heat generation. The effects of various parameters such as sweep time, and device geometry on the switching behavior are investigated. Simulation results demonstrate that thermal management is crucial both for the reliable operation of ReRAM cells and retention. The proposed TCAD model provides insight into the design and optimization of HfO2-based ReRAM devices.
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Dates et versions

cea-04555874 , version 1 (23-04-2024)

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Youssef Hirchaou, Wolfgang Goes, Carl Hylin, Philippe Blaise, Jing Li, et al.. Advanced TCAD modeling of HfO$_2$-based ReRAM: voupling redox reactions and thermal effects. SISPAD 2023 - Conference on Simulation of Semiconductor Processes and Devices, Sep 2023, Kobe, Japan. pp.333-336, ⟨10.23919/SISPAD57422.2023.10319635⟩. ⟨cea-04555874⟩
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