Exploring 3D pixel circuits for small pitch and high brightness GaN microdisplays - CEA - Commissariat à l’énergie atomique et aux énergies alternatives
Communication Dans Un Congrès Année : 2019

Exploring 3D pixel circuits for small pitch and high brightness GaN microdisplays

Résumé

Gallium nitride (GaN) based LEDs are a promising technology for microdisplays thanks to the brightness they can provide. However, they have not been widely adopted for this type of applications yet, partly due to the size and complexity of the associated driver circuits. In this paper, we demonstrate that despite the complexity of the driver circuits, a very small pixel pitch can be achieved thanks to CMOS 3D technology.
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Dates et versions

cea-04548824 , version 1 (16-04-2024)

Identifiants

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Yoann Seauve, Margaux Vigier, Thomas Pilloix, Gilles Sicard. Exploring 3D pixel circuits for small pitch and high brightness GaN microdisplays. PRIME 2019 - 15th Conference on Ph.D Research in Microelectronics and Electronics, Jul 2019, Lausanne, Switzerland. pp.209-212, ⟨10.1109/PRIME.2019.8787842⟩. ⟨cea-04548824⟩
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