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Poster De Conférence Année : 2023

Wafer-level characterization of industrial grade Si-based qubit devices.

Tristan Meunier

Résumé

Efforts in improving the quality and number of solid-state spin qubits within a single device are currently hindered by the lack of large-scale characterization tools. Here, we present a characterization methodology for bi-linear quantum-dot array structures using transistor-like metrics measured at both 300K and 1K, at the wafer-level. The quantum-dot measurements at 1K are crucial to obtain specific information about the spin-qubit confinement and provide meaningful feedbacks to the process integration. With this large-scale characterization, we study the correlations between (i) 300K and 1K transistor-like metrics, and (ii) 1K transistor-like and quantum-dot properties. We discuss the correlations and how they can speed up the characterization at the wafer scale.
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Dates et versions

cea-04533121 , version 1 (08-04-2024)

Identifiants

  • HAL Id : cea-04533121 , version 1

Citer

Emmanuel Chanrion, L.C. Contamin, B. Cardoso Paz, B. Martinez Diaz, B. Bertrand, et al.. Wafer-level characterization of industrial grade Si-based qubit devices.. SiQEW 2023 - Silicon Quantum Electronics Workshop 2023, Oct 2023, Kyoto, Japan. 2023. ⟨cea-04533121⟩
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