Communication Dans Un Congrès Année : 2023

Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs

Résumé

In this paper, we review the nature of traps population and the transport mechanisms in GaN-on-Si E-mode MOS channel HEMTs during High Voltage Bias Temperature Instabilities (HV-BTI) test under various temperatures (T), drain voltage stress (VDSstress) and gate voltage stress (VGSstress) conditions. Thanks to experimental setup using ultra-fast ID(VG) to monitor VTH during both stress and recovery phases from 10µs to several kiloseconds. The temperature dependent measurements show that VTH and RON degradations are related to the CN deep acceptor traps in GaN:C layer. Two mechanisms during the stress phase are identified, CN traps deionization first, impacted by VDSstress, then nBTI behavior influenced by VGSstress. It is observed that high drain voltage stress (≥ 200V) induces a charge redistribution predominantly towards the drain node, while a lower drain voltage stress led to a charge redistribution in the source-gate region
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Dates et versions

cea-04530720 , version 1 (03-04-2024)

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Camille Leurquin, William Vandendaele, Romain Gwoziecki, Blend Mohamad, Ghislain Despesse, et al.. Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs. IRPS 2023 - IEEE International Reliability Physics Symposium, Mar 2023, Monterey, United States. ⟨10.1109/IRPS48203.2023.10117813⟩. ⟨cea-04530720⟩
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