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Communication Dans Un Congrès Année : 2021

Characterization of GaN structures by a combined SIMS and HAXPES approach

Résumé

Among III-N materials, GaN shows great promise and is already used in the electronic industry but there are still technological issues to resolve. Consequently, characterization techniques capable of providing information at the nanometer scale are required in order to meet the industrial demand of this market. The combined approach of hard x-ray photoelectron spectroscopy (HAXPES) and secondary ion mass spectrometry (SIMS) is an attractive method to analyse buried interfaces.

Domaines

Matériaux
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Dates et versions

cea-04503612 , version 1 (13-03-2024)

Identifiants

  • HAL Id : cea-04503612 , version 1

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Tarek Spelta, Marc Veillerot, Eugénie Martinez, Laura Vauche, Pedro Fernandes Paes Pinto Rocha, et al.. Characterization of GaN structures by a combined SIMS and HAXPES approach. EVC 16 - The 16th European Vacuum Congress, Nov 2021, Marseille, France. ⟨cea-04503612⟩
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