Characterization of GaN structures by a combined SIMS and HAXPES approach
Résumé
Among III-N materials, GaN shows great promise and is already used in the electronic industry
but there are still technological issues to resolve. Consequently, characterization techniques
capable of providing information at the nanometer scale are required in order to meet the
industrial demand of this market. The combined approach of hard x-ray photoelectron
spectroscopy (HAXPES) and secondary ion mass spectrometry (SIMS) is an attractive method
to analyse buried interfaces.
Domaines
Matériaux
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