Nature of the metallic and in-gap states in Ni-doped SrTiO$_3$ - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Accéder directement au contenu
Article Dans Une Revue APL Materials Année : 2024

Nature of the metallic and in-gap states in Ni-doped SrTiO$_3$

Résumé

Epitaxial thin films of SrTiO$_3$ (100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy at the Ti and Ni L$_{2,3}$-edges. We find that the Ni doping shifts the valence band of n-doped pristine SrTiO$_3$ toward the Fermi level (in the direction of p-doping) and reducing the bandgap. In the Ti t$_{2g}$-derived mobile electron system (MES), the Ni doping depopulates the out-of-plane d$_{xz/yz}$-derived bands, transforming the MES to two-dimensional and progressively reduces the electron density embedded in the in-plane dxy-derived bands as reflected in their Fermi momentum. Furthermore, the Ti and Ni L$_{2,3}$-edge resonant photoemission is used to identify the Ni 3d impurity state in the vicinity of the valence-band maximum and decipher the full spectrum of the in-gap states originating from the Ni atoms, Ti atoms, and from their hybridized orbitals. Our experimental information about the dependence of the valence bands, MES, and in-gap states in Ni-doped SrTiO$_3$ may help the development of this material toward its device applications associated with the reduced optical bandgap.
Fichier principal
Vignette du fichier
111.pdf (13.45 Mo) Télécharger le fichier
Origine Publication financée par une institution

Dates et versions

cea-04453308 , version 1 (12-02-2024)

Identifiants

Citer

Fatima Alarab, Karol Hricovini, Berengar Leikert, Christine Richter, Thorsten Schmitt, et al.. Nature of the metallic and in-gap states in Ni-doped SrTiO$_3$. APL Materials, 2024, 12, pp.011118. ⟨10.1063/5.0183140⟩. ⟨cea-04453308⟩
22 Consultations
7 Téléchargements

Altmetric

Partager

Gmail Mastodon Facebook X LinkedIn More