Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS 2 in the Presence of Defects, Strain, and Charged Impurities - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Accéder directement au contenu
Article Dans Une Revue ACS Nano Année : 2018

Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS 2 in the Presence of Defects, Strain, and Charged Impurities

P. Mallet

Dates et versions

cea-04338341 , version 1 (12-12-2023)

Identifiants

Citer

Sudipta Dubey, Simone Lisi, Goutham Nayak, Felix Herziger, Van-Dung Nguyen, et al.. Correction to Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS 2 in the Presence of Defects, Strain, and Charged Impurities. ACS Nano, 2018, 12 (10), pp.10565-10566. ⟨10.1021/acsnano.8b07086⟩. ⟨cea-04338341⟩
17 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More