Unveiling charge carrier dynamics of GaN-based materials through a combined Cathodoluminescence and Kelvin Probe Force Microscopy under variable illumination protocol
Résumé
In this study, we developed a method combining cathodoluminescence (CL) and KPFM under variable
illumination to study GaN-based materials, by showing two case studies: n.i.d. GaN-on-Si and
GaN/InGaN MQW mesa structures. These two techniques were chosen for their complementarity (CL
has access to the radiative recombination and KPFM to radiative and non-radiative recombination) and
their nanometric spatial resolution (well suited to study dislocations).
Étude de matériaux à base de GaN par cathodoluminescence et microscopie à force de sonde Kelvin sous d'illumination variable
Domaines
Physique [physics]Origine | Fichiers produits par l'(les) auteur(s) |
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