Unveiling charge carrier dynamics of GaN-based materials through a combined Cathodoluminescence and Kelvin Probe Force Microscopy under variable illumination protocol - CEA - Commissariat à l’énergie atomique et aux énergies alternatives
Poster De Conférence Année : 2023

Unveiling charge carrier dynamics of GaN-based materials through a combined Cathodoluminescence and Kelvin Probe Force Microscopy under variable illumination protocol

Résumé

In this study, we developed a method combining cathodoluminescence (CL) and KPFM under variable illumination to study GaN-based materials, by showing two case studies: n.i.d. GaN-on-Si and GaN/InGaN MQW mesa structures. These two techniques were chosen for their complementarity (CL has access to the radiative recombination and KPFM to radiative and non-radiative recombination) and their nanometric spatial resolution (well suited to study dislocations).
Étude de matériaux à base de GaN par cathodoluminescence et microscopie à force de sonde Kelvin sous d'illumination variable
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Dates et versions

cea-04282750 , version 1 (13-11-2023)

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Palmerina Gonzalez Izquierdo, Davide Zoccarato, Névine Rochat, Julia Simon, Patrick Le Maitre, et al.. Unveiling charge carrier dynamics of GaN-based materials through a combined Cathodoluminescence and Kelvin Probe Force Microscopy under variable illumination protocol. SMSI 2023 - Sensor and Measurement Science International, May 2023, Nuremberg, Germany. , Proceedings of SMSI 2023, Sensor and Measurement Science International, pp.286-287, 2023, ⟨10.5162/SMSI2023/P03⟩. ⟨cea-04282750⟩
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